Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / DF11MR12W1M1B11BOMA1
Herstellerteilenummer | DF11MR12W1M1B11BOMA1 |
---|---|
Zukünftige Teilenummer | FT-DF11MR12W1M1B11BOMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolSiC™ |
DF11MR12W1M1B11BOMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Silicon Carbide (SiC) |
Drain-Source-Spannung (Vdss) | 1200V (1.2kV) |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 50A |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 50A, 15V |
Vgs (th) (Max) @ Id | 5.5V @ 20mA |
Gateladung (Qg) (Max) @ Vgs | 125nC @ 5V |
Eingangskapazität (Ciss) (Max) @ Vds | 3950pF @ 800V |
Leistung max | 20mW |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Chassis Mount |
Paket / fall | Module |
Supplier Device Package | Module |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DF11MR12W1M1B11BOMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | DF11MR12W1M1B11BOMA1-FT |
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