Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / DMHC10H170SFJ-13
Herstellerteilenummer | DMHC10H170SFJ-13 |
---|---|
Zukünftige Teilenummer | FT-DMHC10H170SFJ-13 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DMHC10H170SFJ-13 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N and 2 P-Channel (H-Bridge) |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.9A, 2.3A |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 5A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 9.7nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 1167pF @ 25V |
Leistung max | 2.1W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 12-VDFN Exposed Pad |
Supplier Device Package | V-DFN5045-12 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMHC10H170SFJ-13 Gewicht | kontaktiere uns |
Ersatzteilnummer | DMHC10H170SFJ-13-FT |
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