Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / DMN30H4D0LFDE-13
Herstellerteilenummer | DMN30H4D0LFDE-13 |
---|---|
Zukünftige Teilenummer | FT-DMN30H4D0LFDE-13 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DMN30H4D0LFDE-13 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 300V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 550mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.7V, 10V |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 300mA, 10V |
Vgs (th) (Max) @ Id | 2.8V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 7.6nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 187.3pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 630mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | U-DFN2020-6 (Type E) |
Paket / fall | 6-UDFN Exposed Pad |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMN30H4D0LFDE-13 Gewicht | kontaktiere uns |
Ersatzteilnummer | DMN30H4D0LFDE-13-FT |
DMN3024LSS-13
Diodes Incorporated
DMN6066SSS-13
Diodes Incorporated
DMP3015LSS-13
Diodes Incorporated
DMT10H014LSS-13
Diodes Incorporated
DMT6005LSS-13
Diodes Incorporated
DMT6010LSS-13
Diodes Incorporated
ZXMN2A02N8TA
Diodes Incorporated
DMN4025LSD-13
Diodes Incorporated
DMG4407SSS-13
Diodes Incorporated
DMG4413LSS-13
Diodes Incorporated
LCMXO2-640HC-6TG100I
Lattice Semiconductor Corporation
XA3S400A-4FTG256I
Xilinx Inc.
A54SX72A-1FG484M
Microsemi Corporation
A3P250-1FG256
Microsemi Corporation
ICE40UP3K-UWG30ITR1K
Lattice Semiconductor Corporation
EP4SE530H35C4N
Intel
XC4VLX40-11FFG1148I
Xilinx Inc.
A3P1000-FGG144T
Microsemi Corporation
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP1S20F780C7
Intel