Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / DMN30H4D0LFDE-7
Herstellerteilenummer | DMN30H4D0LFDE-7 |
---|---|
Zukünftige Teilenummer | FT-DMN30H4D0LFDE-7 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DMN30H4D0LFDE-7 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 300V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 550mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.7V, 10V |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 300mA, 10V |
Vgs (th) (Max) @ Id | 2.8V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 7.6nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 187.3pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 630mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | U-DFN2020-6 (Type E) |
Paket / fall | 6-UDFN Exposed Pad |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMN30H4D0LFDE-7 Gewicht | kontaktiere uns |
Ersatzteilnummer | DMN30H4D0LFDE-7-FT |
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