Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / DMN60H080DS-13
Herstellerteilenummer | DMN60H080DS-13 |
---|---|
Zukünftige Teilenummer | FT-DMN60H080DS-13 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DMN60H080DS-13 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 80mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 100 Ohm @ 60mA, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 1.7nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 25pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1.1W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-23-3 |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMN60H080DS-13 Gewicht | kontaktiere uns |
Ersatzteilnummer | DMN60H080DS-13-FT |
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