Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / DMP10H4D2S-7
Herstellerteilenummer | DMP10H4D2S-7 |
---|---|
Zukünftige Teilenummer | FT-DMP10H4D2S-7 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DMP10H4D2S-7 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 270mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 4.2 Ohm @ 500mA, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 1.8nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 87pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 380mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-23 |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMP10H4D2S-7 Gewicht | kontaktiere uns |
Ersatzteilnummer | DMP10H4D2S-7-FT |
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