Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / EMD9FHAT2R
Herstellerteilenummer | EMD9FHAT2R |
---|---|
Zukünftige Teilenummer | FT-EMD9FHAT2R |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
EMD9FHAT2R Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | - |
Widerstand - Basis (R1) | 10 kOhms |
Widerstand - Emitterbasis (R2) | 47 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 68 @ 5mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | - |
Frequenz - Übergang | 250MHz |
Leistung max | 150mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMD9FHAT2R Gewicht | kontaktiere uns |
Ersatzteilnummer | EMD9FHAT2R-FT |
RN1501(TE85L,F)
Toshiba Semiconductor and Storage
RN1506(TE85L,F)
Toshiba Semiconductor and Storage
RN4982,LF(CT
Toshiba Semiconductor and Storage
RN2906,LF
Toshiba Semiconductor and Storage
RN2911,LF
Toshiba Semiconductor and Storage
RN4902,LF(CT
Toshiba Semiconductor and Storage
RN4904,LF
Toshiba Semiconductor and Storage
RN4910,LF
Toshiba Semiconductor and Storage
RN4990(T5L,F,T)
Toshiba Semiconductor and Storage
RN4991(T5L,F,T)
Toshiba Semiconductor and Storage
EX128-PTQ64I
Microsemi Corporation
XC6SLX150T-2FGG676I
Xilinx Inc.
M2GL090-1FCSG325I
Microsemi Corporation
A54SX32A-1TQG176
Microsemi Corporation
EP4CE6F17I7
Intel
XC6VLX240T-1FFG784C
Xilinx Inc.
XC7K325T-1FF900C
Xilinx Inc.
M2GL060-FGG676
Microsemi Corporation
AGL125V5-QNG132
Microsemi Corporation
5CEBA5U19C7N
Intel