Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / EMH6T2R
Herstellerteilenummer | EMH6T2R |
---|---|
Zukünftige Teilenummer | FT-EMH6T2R |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EMH6T2R Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
Transistortyp | 2 NPN - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 47 kOhms |
Widerstand - Emitterbasis (R2) | 47 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 68 @ 5mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 500µA, 10mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | 250MHz |
Leistung max | 150mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMH6T2R Gewicht | kontaktiere uns |
Ersatzteilnummer | EMH6T2R-FT |
RN1907,LF(CT
Toshiba Semiconductor and Storage
RN2902,LF(CT
Toshiba Semiconductor and Storage
RN2903,LF(CT
Toshiba Semiconductor and Storage
RN2904,LF(CT
Toshiba Semiconductor and Storage
RN4901,LF(CT
Toshiba Semiconductor and Storage
RN4905,LF(CT
Toshiba Semiconductor and Storage
RN4907,LF
Toshiba Semiconductor and Storage
RN4983,LF(CT
Toshiba Semiconductor and Storage
RN4984,LF(CT
Toshiba Semiconductor and Storage
RN4987,LF(CT
Toshiba Semiconductor and Storage
XC4006E-3PQ208I
Xilinx Inc.
XC6SLX150T-N3FG484I
Xilinx Inc.
EP20K200CF672C7ES
Intel
5SGSED8N2F45I3N
Intel
5SGXEA7H1F35C1N
Intel
AGLP030V5-CS289
Microsemi Corporation
AGL1000V2-FGG144T
Microsemi Corporation
EP2AGX260FF35C6NES
Intel
EP4SGX290FF35I4
Intel
EP1SGX25FF1020I6N
Intel