Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays / EMZ1DXV6T5G
Herstellerteilenummer | EMZ1DXV6T5G |
---|---|
Zukünftige Teilenummer | FT-EMZ1DXV6T5G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
EMZ1DXV6T5G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
Transistortyp | NPN, PNP |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 60V |
Vce-Sättigung (max.) @ Ib, Ic | 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA |
Strom - Kollektorabschaltung (max.) | 500nA (ICBO) |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 120 @ 1mA, 6V |
Leistung max | 500mW |
Frequenz - Übergang | 180MHz, 140MHz |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMZ1DXV6T5G Gewicht | kontaktiere uns |
Ersatzteilnummer | EMZ1DXV6T5G-FT |
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