Herstellerteilenummer | EPC2212 |
---|---|
Zukünftige Teilenummer | FT-EPC2212 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | eGaN® |
EPC2212 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | GaNFET (Gallium Nitride) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 18A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 11A, 5V |
Vgs (th) (Max) @ Id | 2.5V @ 3mA |
Gateladung (Qg) (Max) @ Vgs | 4nC @ 5V |
Vgs (Max) | +6V, -4V |
Eingangskapazität (Ciss) (Max) @ Vds | 407pF @ 50V |
FET-Funktion | - |
Verlustleistung (max.) | - |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | Die |
Paket / fall | Die |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC2212 Gewicht | kontaktiere uns |
Ersatzteilnummer | EPC2212-FT |
FDMC8878_F126
ON Semiconductor
FDMC86244
ON Semiconductor
FDMC7692
ON Semiconductor
FDMC7692S-F127
ON Semiconductor
FDMC7672S-F126
ON Semiconductor
FDMC7692S-F126
ON Semiconductor
FDMC7660DC
ON Semiconductor
FDMC612PZ
ON Semiconductor
FDMC4435BZ-F126
ON Semiconductor
FDMC3612
ON Semiconductor
A1010B-2VQ80I
Microsemi Corporation
EPF10K30ATC144-1
Intel
XC3S500E-4PQ208I
Xilinx Inc.
AFS090-2FG256I
Microsemi Corporation
AGL1000V5-FGG256I
Microsemi Corporation
LCMXO3L-4300C-5BG324I
Lattice Semiconductor Corporation
EP2C20F484C6
Intel
10AX022E3F29I2LG
Intel
5CGXBC9A7U19C8N
Intel
EP4CE75F29C8
Intel