Herstellerteilenummer | EPC8010 |
---|---|
Zukünftige Teilenummer | FT-EPC8010 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | eGaN® |
EPC8010 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | GaNFET (Gallium Nitride) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.7A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 500mA, 5V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 0.48nC @ 5V |
Vgs (Max) | +6V, -4V |
Eingangskapazität (Ciss) (Max) @ Vds | 55pF @ 50V |
FET-Funktion | - |
Verlustleistung (max.) | - |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | Die |
Paket / fall | Die |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
EPC8010 Gewicht | kontaktiere uns |
Ersatzteilnummer | EPC8010-FT |
FDMS86255
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FDMC7660DC
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