Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FCH25N60N
Herstellerteilenummer | FCH25N60N |
---|---|
Zukünftige Teilenummer | FT-FCH25N60N |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | SupreMOS™ |
FCH25N60N Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 25A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 126 mOhm @ 12.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 74nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 3352pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 216W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-247 |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCH25N60N Gewicht | kontaktiere uns |
Ersatzteilnummer | FCH25N60N-FT |
GP1M009A020FG
Global Power Technologies Group
GP1M009A050FSH
Global Power Technologies Group
GP1M009A060FH
Global Power Technologies Group
GP1M009A070F
Global Power Technologies Group
GP1M009A090FH
Global Power Technologies Group
GP1M010A060FH
Global Power Technologies Group
GP1M010A080FH
Global Power Technologies Group
GP1M011A050FH
Global Power Technologies Group
GP1M011A050FSH
Global Power Technologies Group
GP1M012A060FH
Global Power Technologies Group
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