Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FCP099N60E
Herstellerteilenummer | FCP099N60E |
---|---|
Zukünftige Teilenummer | FT-FCP099N60E |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | SuperFET® II |
FCP099N60E Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 37A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 18.5A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 114nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 3465pF @ 380V |
FET-Funktion | - |
Verlustleistung (max.) | 357W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCP099N60E Gewicht | kontaktiere uns |
Ersatzteilnummer | FCP099N60E-FT |
FDP8860
ON Semiconductor
FQP8N60C
ON Semiconductor
FDP19N40
ON Semiconductor
FQP13N50C
ON Semiconductor
FQP5N60C
ON Semiconductor
FQP12N60C
ON Semiconductor
FCP16N60
ON Semiconductor
FDP030N06
ON Semiconductor
FDP025N06
ON Semiconductor
NDP7060
ON Semiconductor
LCMXO2-7000HE-6TG144I
Lattice Semiconductor Corporation
XC6SLX25-N3FGG484I
Xilinx Inc.
M2GL090T-FG484
Microsemi Corporation
M7A3P1000-PQ208
Microsemi Corporation
5SGXEB5R3F43C3N
Intel
XC4VFX40-10FF1152I
Xilinx Inc.
A40MX04-1PLG84M
Microsemi Corporation
A42MX16-2PL84I
Microsemi Corporation
LFXP2-30E-7FN484C
Lattice Semiconductor Corporation
5CGXFC4C6U19I7N
Intel