Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FCP260N60E
Herstellerteilenummer | FCP260N60E |
---|---|
Zukünftige Teilenummer | FT-FCP260N60E |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | SuperFET® II |
FCP260N60E Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 15A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 7.5A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 62nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2500pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 156W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCP260N60E Gewicht | kontaktiere uns |
Ersatzteilnummer | FCP260N60E-FT |
FDP075N15A-F102
ON Semiconductor
FDP8441
ON Semiconductor
HUF75639P3
ON Semiconductor
FQP9P25
ON Semiconductor
FQP34N20
ON Semiconductor
FCP150N65F
ON Semiconductor
FCP165N60E
ON Semiconductor
FCP190N65S3
ON Semiconductor
FCP9N60N
ON Semiconductor
FDP038AN06A0
ON Semiconductor
LCMXO2-640HC-6TG100I
Lattice Semiconductor Corporation
XA3S400A-4FTG256I
Xilinx Inc.
A54SX72A-1FG484M
Microsemi Corporation
A3P250-1FG256
Microsemi Corporation
ICE40UP3K-UWG30ITR1K
Lattice Semiconductor Corporation
EP4SE530H35C4N
Intel
XC4VLX40-11FFG1148I
Xilinx Inc.
A3P1000-FGG144T
Microsemi Corporation
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP1S20F780C7
Intel