Herstellerteilenummer | FDB2570 |
---|---|
Zukünftige Teilenummer | FT-FDB2570 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDB2570 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 150V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 22A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 11A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 56nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1911pF @ 75V |
FET-Funktion | - |
Verlustleistung (max.) | 93W (Tc) |
Betriebstemperatur | -65°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-263AB |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDB2570 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDB2570-FT |
FQB6N40CTM
ON Semiconductor
FDB035AN06A0
ON Semiconductor
FDB045AN08A0
ON Semiconductor
FDB050AN06A0
ON Semiconductor
FDB2532-F085
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FDB8030L
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FDB86569-F085
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FQB10N50CFTM-WS
ON Semiconductor
FQB27P06TM
ON Semiconductor
FQB5N50CTM
ON Semiconductor
A1020B-2VQ80I
Microsemi Corporation
XC7A50T-3FGG484E
Xilinx Inc.
5SGXMB6R2F40I2N
Intel
5SGSMD3E3H29C2N
Intel
EP2AGX125DF25I3N
Intel
XC5VLX110-3FFG1760C
Xilinx Inc.
LCMXO2-7000ZE-1FTG256C
Lattice Semiconductor Corporation
LCMXO2-4000HE-6MG132C
Lattice Semiconductor Corporation
5AGXBA7D4F31I5N
Intel
EP4SGX230HF35I4N
Intel