Herstellerteilenummer | FDB2670 |
---|---|
Zukünftige Teilenummer | FT-FDB2670 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDB2670 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 19A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 38nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1320pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 93W (Tc) |
Betriebstemperatur | -65°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-263AB |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDB2670 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDB2670-FT |
FDB035AN06A0
ON Semiconductor
FDB045AN08A0
ON Semiconductor
FDB050AN06A0
ON Semiconductor
FDB2532-F085
ON Semiconductor
FDB8030L
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FDB86569-F085
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FQB10N50CFTM-WS
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FQB27P06TM
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FQB5N50CTM
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FQB8P10TM
ON Semiconductor
EX128-TQ100
Microsemi Corporation
XC3S50A-4VQG100I
Xilinx Inc.
A54SX32A-1CQ256
Microsemi Corporation
A3P1000-PQ208
Microsemi Corporation
A42MX16-VQG100M
Microsemi Corporation
EP1SGX10CF672C7N
Intel
10AX016C3U19I2LG
Intel
10CL025ZE144I8G
Intel
5SGXEA7H3F35I4
Intel
EP3SE50F780I3
Intel