Herstellerteilenummer | FDB2710 |
---|---|
Zukünftige Teilenummer | FT-FDB2710 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDB2710 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 250V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 50A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 42.5 mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 101nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 7280pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 260W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDB2710 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDB2710-FT |
FCMT250N65S3
ON Semiconductor
FCMT299N60
ON Semiconductor
FDA18N50
ON Semiconductor
FDA38N30
ON Semiconductor
FCA16N60N
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FQA11N90C-F109
ON Semiconductor
FCA76N60N
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FQA36P15
ON Semiconductor
FQA70N10
ON Semiconductor
FQA11N90-F109
ON Semiconductor
AT6010ALV-4AC
Microchip Technology
EX64-TQ100I
Microsemi Corporation
XC4005XL-3VQ100I
Xilinx Inc.
M1A3P600L-1FGG484I
Microsemi Corporation
LFE5UM-85F-7BG756I
Lattice Semiconductor Corporation
EP20K200EFC484-2XN
Intel
5SGXEA5K3F40I3LN
Intel
EP4CE6E22C8N
Intel
LFEC6E-5F484C
Lattice Semiconductor Corporation
5SGXEA3H2F35I3LN
Intel