Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / FDC6301N
Herstellerteilenummer | FDC6301N |
---|---|
Zukünftige Teilenummer | FT-FDC6301N |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
FDC6301N Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 220mA |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | 9.5pF @ 10V |
Leistung max | 700mW |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | SuperSOT™-6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDC6301N Gewicht | kontaktiere uns |
Ersatzteilnummer | FDC6301N-FT |
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