Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FDD068AN03L
Herstellerteilenummer | FDD068AN03L |
---|---|
Zukünftige Teilenummer | FT-FDD068AN03L |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDD068AN03L Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 17A (Ta), 35A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 35A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 60nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2525pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 80W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252AA |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDD068AN03L Gewicht | kontaktiere uns |
Ersatzteilnummer | FDD068AN03L-FT |
2SK2231(TE16R1,NQ)
Toshiba Semiconductor and Storage
2SK2266(TE24R,Q)
Toshiba Semiconductor and Storage
2SK2845(TE16L1,Q)
Toshiba Semiconductor and Storage
2SK2883(TE24L,Q)
Toshiba Semiconductor and Storage
2SK2993(TE24L,Q)
Toshiba Semiconductor and Storage
2SK3068(TE24L,Q)
Toshiba Semiconductor and Storage
2SK3127(TE24L,Q)
Toshiba Semiconductor and Storage
2SK3309(TE24L,Q)
Toshiba Semiconductor and Storage
2SK3342(TE16L1,NQ)
Toshiba Semiconductor and Storage
2SK3462(TE16L1,NQ)
Toshiba Semiconductor and Storage
A3P060-1TQ144I
Microsemi Corporation
M2GL025T-1FCSG325I
Microsemi Corporation
M1A3P400-FG484
Microsemi Corporation
LFE5UM-45F-8BG381C
Lattice Semiconductor Corporation
EPF10K130EFI484-2
Intel
5SGXEA4K1F35C2N
Intel
ICE40UL1K-CM36AI
Lattice Semiconductor Corporation
LFXP6C-5Q208C
Lattice Semiconductor Corporation
5AGXFB3H4F35C5N
Intel
10AX016E3F27I1HG
Intel