Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FDD14AN06LA0
Herstellerteilenummer | FDD14AN06LA0 |
---|---|
Zukünftige Teilenummer | FT-FDD14AN06LA0 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDD14AN06LA0 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9.5A (Ta), 50A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 11.6 mOhm @ 50A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 32nC @ 5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2810pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 125W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252AA |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDD14AN06LA0 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDD14AN06LA0-FT |
2SK2845(TE16L1,Q)
Toshiba Semiconductor and Storage
2SK2883(TE24L,Q)
Toshiba Semiconductor and Storage
2SK2993(TE24L,Q)
Toshiba Semiconductor and Storage
2SK3068(TE24L,Q)
Toshiba Semiconductor and Storage
2SK3127(TE24L,Q)
Toshiba Semiconductor and Storage
2SK3309(TE24L,Q)
Toshiba Semiconductor and Storage
2SK3342(TE16L1,NQ)
Toshiba Semiconductor and Storage
2SK3462(TE16L1,NQ)
Toshiba Semiconductor and Storage
2SK3816-DL-E
ON Semiconductor
2SK3817-DL-E
ON Semiconductor
XCV50-6TQ144C
Xilinx Inc.
LCMXO2-256HC-4SG32C
Lattice Semiconductor Corporation
LFE5UM-45F-8BG554C
Lattice Semiconductor Corporation
M1AGL250V5-VQ100
Microsemi Corporation
EPF10K100ABC600-1
Intel
5SGXMA5K1F40C2LN
Intel
XC4013E-2HQ208I
Xilinx Inc.
XC2VP2-6FF672I
Xilinx Inc.
XC6SLX9-L1CPG196C
Xilinx Inc.
M1AGL1000V2-FGG144I
Microsemi Corporation