Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FDD24AN06LA0_SB82179
Herstellerteilenummer | FDD24AN06LA0_SB82179 |
---|---|
Zukünftige Teilenummer | FT-FDD24AN06LA0_SB82179 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDD24AN06LA0_SB82179 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 7.1A (Ta), 40A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 40A, 10V |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 21nC @ 5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1850pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 75W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252AA |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDD24AN06LA0_SB82179 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDD24AN06LA0_SB82179-FT |
2SK3342(TE16L1,NQ)
Toshiba Semiconductor and Storage
2SK3462(TE16L1,NQ)
Toshiba Semiconductor and Storage
2SK3816-DL-E
ON Semiconductor
2SK3817-DL-E
ON Semiconductor
2SK3821-DL-E
ON Semiconductor
64-4051
Infineon Technologies
64-4059PBF
Infineon Technologies
94-2335
Infineon Technologies
94-4007
Infineon Technologies
94-4156PBF
Infineon Technologies
LCMXO2-7000HE-6TG144I
Lattice Semiconductor Corporation
XC6SLX25-N3FGG484I
Xilinx Inc.
M2GL090T-FG484
Microsemi Corporation
M7A3P1000-PQ208
Microsemi Corporation
5SGXEB5R3F43C3N
Intel
XC4VFX40-10FF1152I
Xilinx Inc.
A40MX04-1PLG84M
Microsemi Corporation
A42MX16-2PL84I
Microsemi Corporation
LFXP2-30E-7FN484C
Lattice Semiconductor Corporation
5CGXFC4C6U19I7N
Intel