Herstellerteilenummer | FDD2612 |
---|---|
Zukünftige Teilenummer | FT-FDD2612 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDD2612 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 4.9A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 720 mOhm @ 1.5A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 234pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 42W (Ta) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDD2612 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDD2612-FT |
2SK3817-DL-E
ON Semiconductor
2SK3821-DL-E
ON Semiconductor
64-4051
Infineon Technologies
64-4059PBF
Infineon Technologies
94-2335
Infineon Technologies
94-4007
Infineon Technologies
94-4156PBF
Infineon Technologies
94-4737
Infineon Technologies
94-4762
Infineon Technologies
AUIRFR024NTRL
Infineon Technologies
LCMXO2-640HC-4SG48C
Lattice Semiconductor Corporation
A54SX32A-1TQG144
Microsemi Corporation
XC6SLX75T-4FGG484C
Xilinx Inc.
A3P600L-1FGG484
Microsemi Corporation
MPF300T-FCG1152E
Microsemi Corporation
A40MX04-FPL68
Microsemi Corporation
AGLN250V5-VQ100I
Microsemi Corporation
5SGXMA7N2F45C3N
Intel
LFXP6E-3Q208C
Lattice Semiconductor Corporation
5SGSMD4H3F35C4N
Intel