Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FDFMA2P859T
Herstellerteilenummer | FDFMA2P859T |
---|---|
Zukünftige Teilenummer | FT-FDFMA2P859T |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDFMA2P859T Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 3A, 4.5V |
Vgs (th) (Max) @ Id | 1.3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 6nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 435pF @ 10V |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 1.4W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | MicroFET 2x2 Thin |
Paket / fall | 6-UDFN Exposed Pad |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDFMA2P859T Gewicht | kontaktiere uns |
Ersatzteilnummer | FDFMA2P859T-FT |
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