Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FDH50N50
Herstellerteilenummer | FDH50N50 |
---|---|
Zukünftige Teilenummer | FT-FDH50N50 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | UniFET™ |
FDH50N50 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 48A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 24A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 137nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 6460pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 625W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-247 |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDH50N50 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDH50N50-FT |
GP1M010A080FH
Global Power Technologies Group
GP1M011A050FH
Global Power Technologies Group
GP1M011A050FSH
Global Power Technologies Group
GP1M012A060FH
Global Power Technologies Group
GP1M013A050FH
Global Power Technologies Group
GP1M015A050FH
Global Power Technologies Group
GP1M016A025FG
Global Power Technologies Group
GP1M016A060F
Global Power Technologies Group
GP1M016A060FH
Global Power Technologies Group
GP1M018A020FG
Global Power Technologies Group
ICE40UP5K-SG48I
Lattice Semiconductor Corporation
XC3S250E-5PQ208C
Xilinx Inc.
XC2V1000-5FGG456I
Xilinx Inc.
10CL010ZU256I8G
Intel
5SGXMA7K2F40I3
Intel
A54SX32A-1TQ100I
Microsemi Corporation
APA075-FGG144
Microsemi Corporation
10AX066N2F40I2SGES
Intel
EPF10K50VBC356-2N
Intel
EPF10K50VBI356-4
Intel