Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FDMC5614P
Herstellerteilenummer | FDMC5614P |
---|---|
Zukünftige Teilenummer | FT-FDMC5614P |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDMC5614P Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.7A (Ta), 13.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 5.7A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1055pF @ 30V |
FET-Funktion | - |
Verlustleistung (max.) | 2.1W (Ta), 42W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-MLP (3.3x3.3) |
Paket / fall | 8-PowerWDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDMC5614P Gewicht | kontaktiere uns |
Ersatzteilnummer | FDMC5614P-FT |
FQI47P06TU
ON Semiconductor
FQI4N20LTU
ON Semiconductor
FQI4N20TU
ON Semiconductor
FQI4N25TU
ON Semiconductor
FQI4N80TU
ON Semiconductor
FQI4N90TU
ON Semiconductor
FQI4P40TU
ON Semiconductor
FQI50N06LTU
ON Semiconductor
FQI50N06TU
ON Semiconductor
FQI5N15TU
ON Semiconductor
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel