Herstellerteilenummer | FDN358P |
---|---|
Zukünftige Teilenummer | FT-FDN358P |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDN358P Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.5A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 1.5A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 5.6nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 182pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 500mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDN358P Gewicht | kontaktiere uns |
Ersatzteilnummer | FDN358P-FT |
SQ2389ES-T1_GE3
Vishay Siliconix
2N7002KA-TP
Micro Commercial Co
2SK1828TE85LF
Toshiba Semiconductor and Storage
SI2301A-TP
Micro Commercial Co
SI2302CDS-T1-GE3
Vishay Siliconix
SI2324A-TP
Micro Commercial Co
SI2328DS-T1-GE3
Vishay Siliconix
SQ2319ADS-T1_GE3
Vishay Siliconix
2N7002H6327XTSA2
Infineon Technologies
MMBF170
ON Semiconductor
XC3S400-5FTG256C
Xilinx Inc.
XC7A25T-1CSG325C
Xilinx Inc.
A3P1000L-1FG256
Microsemi Corporation
LCMXO3L-4300E-5UWG81CTR50
Lattice Semiconductor Corporation
5SGXEA3K1F35I2N
Intel
XC4020E-3HQ208I
Xilinx Inc.
XC7VX415T-2FFG1158I
Xilinx Inc.
XC7VX550T-1FFG1158C
Xilinx Inc.
XCKU5P-1SFVB784I
Xilinx Inc.
LFXP10C-5F256C
Lattice Semiconductor Corporation