Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FDP027N08B
Herstellerteilenummer | FDP027N08B |
---|---|
Zukünftige Teilenummer | FT-FDP027N08B |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDP027N08B Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 80V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 120A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 100A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 178nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 13530pF @ 40V |
FET-Funktion | - |
Verlustleistung (max.) | 246W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDP027N08B Gewicht | kontaktiere uns |
Ersatzteilnummer | FDP027N08B-FT |
FCP150N65F
ON Semiconductor
FCP165N60E
ON Semiconductor
FCP190N65S3
ON Semiconductor
FCP9N60N
ON Semiconductor
FDP038AN06A0
ON Semiconductor
FDP42AN15A0
ON Semiconductor
FDP5N60NZ
ON Semiconductor
FCP20N60
ON Semiconductor
FDP100N10
ON Semiconductor
FDP120N10
ON Semiconductor
A3P030-2QNG68I
Microsemi Corporation
A1425A-1PQ100I
Microsemi Corporation
XC4052XL-09HQ304C
Xilinx Inc.
A3P125-2PQ208I
Microsemi Corporation
A3P250L-VQG100I
Microsemi Corporation
EP3CLS100F484C7
Intel
EP2AGX125DF25C4N
Intel
EP2AGX65DF25C5
Intel
5CEBA5U19C8N
Intel
EP1C20F324I7N
Intel