Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FDP030N06B-F102
Herstellerteilenummer | FDP030N06B-F102 |
---|---|
Zukünftige Teilenummer | FT-FDP030N06B-F102 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDP030N06B-F102 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 120A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 100A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 99nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 8030pF @ 30V |
FET-Funktion | - |
Verlustleistung (max.) | 205W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDP030N06B-F102 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDP030N06B-F102-FT |
FDP12N50
ON Semiconductor
FDP7N50
ON Semiconductor
FQP12P10
ON Semiconductor
FQP2P40-F080
ON Semiconductor
FQP6N40C
ON Semiconductor
FQP9N90C
ON Semiconductor
FQP10N20C
ON Semiconductor
FCP22N60N
ON Semiconductor
FDP8860
ON Semiconductor
FQP8N60C
ON Semiconductor
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel