Herstellerteilenummer | FDP2532 |
---|---|
Zukünftige Teilenummer | FT-FDP2532 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDP2532 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 150V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 8A (Ta), 79A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 33A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 107nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 5870pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 310W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDP2532 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDP2532-FT |
FQPF7P06
ON Semiconductor
FQPF8N60CT
ON Semiconductor
FQPF8N90C
ON Semiconductor
FQPF8P10
ON Semiconductor
FQPF90N10V2
ON Semiconductor
FQPF9N08
ON Semiconductor
FQPF9N08L
ON Semiconductor
FQPF9N15
ON Semiconductor
FQPF9N25
ON Semiconductor
FQPF9N25CT
ON Semiconductor
EP1C6T144C6
Intel
LCMXO2-1200ZE-3TG144IR1
Lattice Semiconductor Corporation
A42MX09-FVQ100
Microsemi Corporation
EP4CE10E22C7N
Intel
XC5VLX30-1FF676I
Xilinx Inc.
AGL600V2-FG144
Microsemi Corporation
LCMXO2-7000HC-6BG256C
Lattice Semiconductor Corporation
LFXP2-8E-5MN132C
Lattice Semiconductor Corporation
5AGXMA1D4F31I3N
Intel
EP4CE55F29C6
Intel