Herstellerteilenummer | FDP8878 |
---|---|
Zukünftige Teilenummer | FT-FDP8878 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerTrench® |
FDP8878 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 40A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 40A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 23nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1235pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 40.5W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDP8878 Gewicht | kontaktiere uns |
Ersatzteilnummer | FDP8878-FT |
FDP33N25
ON Semiconductor
HUF75542P3
ON Semiconductor
FQP50N06
ON Semiconductor
FQP11N40C
ON Semiconductor
FDP3651U
ON Semiconductor
FDP3652
ON Semiconductor
FQP7N80C
ON Semiconductor
FQP3P20
ON Semiconductor
HUF75339P3
ON Semiconductor
FQP55N10
ON Semiconductor
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel