Herstellerteilenummer | FDR858P |
---|---|
Zukünftige Teilenummer | FT-FDR858P |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
FDR858P Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 8A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 8A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 30nC @ 5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2010pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 1.8W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SuperSOT™-8 |
Paket / fall | 8-LSOP (0.130", 3.30mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDR858P Gewicht | kontaktiere uns |
Ersatzteilnummer | FDR858P-FT |
CPH6350-P-TL-E
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