Herstellerteilenummer | FDV302P |
---|---|
Zukünftige Teilenummer | FT-FDV302P |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
FDV302P Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 120mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 200mA, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 0.31nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 11pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 350mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-23 |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FDV302P Gewicht | kontaktiere uns |
Ersatzteilnummer | FDV302P-FT |
SI1417EDH-T1-GE3
Vishay Siliconix
SI1419DH-T1-E3
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SI1422DH-T1-GE3
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SI1424EDH-T1-GE3
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SI1426DH-T1-E3
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SI1427EDH-T1-GE3
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SI1428EDH-T1-GE3
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SI1433DH-T1-E3
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