Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / FF45MR12W1M1B11BOMA1
Herstellerteilenummer | FF45MR12W1M1B11BOMA1 |
---|---|
Zukünftige Teilenummer | FT-FF45MR12W1M1B11BOMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | CoolSiC™ |
FF45MR12W1M1B11BOMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Silicon Carbide (SiC) |
Drain-Source-Spannung (Vdss) | 1200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 25A (Tj) |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 25A, 15V (Typ) |
Vgs (th) (Max) @ Id | 5.55V @ 10mA |
Gateladung (Qg) (Max) @ Vgs | 62nC @ 15V |
Eingangskapazität (Ciss) (Max) @ Vds | 1840pF @ 800V |
Leistung max | 20mW (Tc) |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Chassis Mount |
Paket / fall | Module |
Supplier Device Package | AG-EASY1BM-2 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FF45MR12W1M1B11BOMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | FF45MR12W1M1B11BOMA1-FT |
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