Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - IGBTs - Module / FP50R07N2E4BOSA1
Herstellerteilenummer | FP50R07N2E4BOSA1 |
---|---|
Zukünftige Teilenummer | FT-FP50R07N2E4BOSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
FP50R07N2E4BOSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
IGBT-Typ | Trench Field Stop |
Aufbau | Three Phase Inverter |
Spannung - Durchschlag Kollektoremitter (max.) | 650V |
Stromabnehmer (Ic) (max.) | 70A |
Leistung max | - |
Vce (ein) (max.) @ Vge, Ic | 1.95V @ 15V, 50A |
Strom - Kollektorabschaltung (max.) | 1mA |
Eingangskapazität (Cies) @ Vce | 3.1nF @ 25V |
Eingang | Standard |
NTC-Thermistor | Yes |
Betriebstemperatur | -40°C ~ 150°C |
Befestigungsart | Chassis Mount |
Paket / fall | Module |
Supplier Device Package | Module |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FP50R07N2E4BOSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | FP50R07N2E4BOSA1-FT |
GHIS060A120S-A2
Global Power Technologies Group
GHIS080A120S-A1
Global Power Technologies Group
GHIS080A120S-A2
Global Power Technologies Group
GHIS030A120S-A1
Global Power Technologies Group
GSID100A120S5C1
Global Power Technologies Group
GSID150A120S5C1
Global Power Technologies Group
GSID300A120S5C1
Global Power Technologies Group
GSID200A120S5C1
Global Power Technologies Group
GSID300A125S5C1
Global Power Technologies Group
GHIS080A060S1-E1
Global Power Technologies Group
XC6SLX100-N3CSG484I
Xilinx Inc.
LFE2-12E-7Q208C
Lattice Semiconductor Corporation
A3P400-FG256I
Microsemi Corporation
A3P600-PQ208I
Microsemi Corporation
LCMXO3LF-4300E-5UWG81ITR50
Lattice Semiconductor Corporation
AT40K20-2DQI
Microchip Technology
5SGXMABN3F45C3N
Intel
LFE2M35SE-6FN672C
Lattice Semiconductor Corporation
LCMXO3LF-640E-6MG121C
Lattice Semiconductor Corporation
EP3SL110F780C4N
Intel