Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQA13N80-F109
Herstellerteilenummer | FQA13N80-F109 |
---|---|
Zukünftige Teilenummer | FT-FQA13N80-F109 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQA13N80-F109 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 800V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12.6A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 6.3A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 88nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 3500pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 300W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-3PN |
Paket / fall | TO-3P-3, SC-65-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQA13N80-F109 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQA13N80-F109-FT |
RJK2055DPA-00#J0
Renesas Electronics America
RJK2057DPA-00#J0
Renesas Electronics America
RJK2555DPA-00#J0
Renesas Electronics America
RJK2557DPA-00#J0
Renesas Electronics America
RJK03M5DNS-00#J5
Renesas Electronics America
UPA2820T1S-E2-AT
Renesas Electronics America
UPA2825T1S-E2-AT
Renesas Electronics America
2SK3482-AZ
Renesas Electronics America
2SK3484-AZ
Renesas Electronics America
2SK3483-AZ
Renesas Electronics America
LCMXO2-640HC-6TG100I
Lattice Semiconductor Corporation
XA3S400A-4FTG256I
Xilinx Inc.
A54SX72A-1FG484M
Microsemi Corporation
A3P250-1FG256
Microsemi Corporation
ICE40UP3K-UWG30ITR1K
Lattice Semiconductor Corporation
EP4SE530H35C4N
Intel
XC4VLX40-11FFG1148I
Xilinx Inc.
A3P1000-FGG144T
Microsemi Corporation
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP1S20F780C7
Intel