Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQB6N60CTM
Herstellerteilenummer | FQB6N60CTM |
---|---|
Zukünftige Teilenummer | FT-FQB6N60CTM |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQB6N60CTM Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 2.75A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 810pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 125W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB6N60CTM Gewicht | kontaktiere uns |
Ersatzteilnummer | FQB6N60CTM-FT |
FDB7030L_L86Z
ON Semiconductor
FDB8160
ON Semiconductor
FDB8160-F085
ON Semiconductor
FDB8441-F085
ON Semiconductor
FDB8442
ON Semiconductor
FDB8443-F085
ON Semiconductor
FDB8444-F085
ON Semiconductor
FDB8445-F085
ON Semiconductor
FDB8453LZ
ON Semiconductor
FDB86360_SN00307
ON Semiconductor
XC6SLX150-3FG676I
Xilinx Inc.
XC3S1400A-5FG484C
Xilinx Inc.
AGL600V5-FG484I
Microsemi Corporation
LAXP2-8E-5FTN256E
Lattice Semiconductor Corporation
LCMXO2-1200HC-5SG32C
Lattice Semiconductor Corporation
A40MX04-3PL68I
Microsemi Corporation
5SGSED8N2F45I2
Intel
5SGXEBBR2H43I3L
Intel
LFEC10E-3F256C
Lattice Semiconductor Corporation
EPF10K10QC208-3N
Intel