Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQB9N25TM
Herstellerteilenummer | FQB9N25TM |
---|---|
Zukünftige Teilenummer | FT-FQB9N25TM |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQB9N25TM Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 250V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9.4A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 4.7A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 700pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.13W (Ta), 90W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB9N25TM Gewicht | kontaktiere uns |
Ersatzteilnummer | FQB9N25TM-FT |
FQB12N50TM_AM002
ON Semiconductor
FQB12N60CTM
ON Semiconductor
FQB12N60TM_AM002
ON Semiconductor
FQB12P10TM
ON Semiconductor
FQB13N06LTM
ON Semiconductor
FQB13N06TM
ON Semiconductor
FQB13N10LTM
ON Semiconductor
FQB13N10TM
ON Semiconductor
FQB13N50CTM
ON Semiconductor
FQB14N15TM
ON Semiconductor
XC6SLX100T-N3FG900C
Xilinx Inc.
M2GL050TS-1FGG484I
Microsemi Corporation
EP2A40F672C7
Intel
EP3SL200F1517C4
Intel
XC7A200T-2FB484I
Xilinx Inc.
XC6VCX195T-1FFG1156I
Xilinx Inc.
LFEC33E-3FN484C
Lattice Semiconductor Corporation
EPF10K10LC84-4
Intel
EPF81188ARC240-2
Intel
EP1C12Q240C7
Intel