Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQB9N50CFTM_WS
Herstellerteilenummer | FQB9N50CFTM_WS |
---|---|
Zukünftige Teilenummer | FT-FQB9N50CFTM_WS |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | FRFET® |
FQB9N50CFTM_WS Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 35nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1030pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 173W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB9N50CFTM_WS Gewicht | kontaktiere uns |
Ersatzteilnummer | FQB9N50CFTM_WS-FT |
FQB12N60TM_AM002
ON Semiconductor
FQB12P10TM
ON Semiconductor
FQB13N06LTM
ON Semiconductor
FQB13N06TM
ON Semiconductor
FQB13N10LTM
ON Semiconductor
FQB13N10TM
ON Semiconductor
FQB13N50CTM
ON Semiconductor
FQB14N15TM
ON Semiconductor
FQB14N30TM
ON Semiconductor
FQB15P12TM
ON Semiconductor
LCMXO2-1200ZE-2TG144I
Lattice Semiconductor Corporation
XC3S1400AN-4FGG484C
Xilinx Inc.
10M08DCF484C8G
Intel
5SGXMB5R3F43C3N
Intel
5SGXMA7H3F35I3
Intel
LCMXO2280E-3B256C
Lattice Semiconductor Corporation
LCMXO2-4000ZE-1FTG256C
Lattice Semiconductor Corporation
5AGTFC7H3F35I3G
Intel
EP1C4F400C8
Intel
EP20K200EBC356-1
Intel