Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQB9N50CFTM_WS
Herstellerteilenummer | FQB9N50CFTM_WS |
---|---|
Zukünftige Teilenummer | FT-FQB9N50CFTM_WS |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | FRFET® |
FQB9N50CFTM_WS Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 35nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1030pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 173W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB9N50CFTM_WS Gewicht | kontaktiere uns |
Ersatzteilnummer | FQB9N50CFTM_WS-FT |
FQB12N60TM_AM002
ON Semiconductor
FQB12P10TM
ON Semiconductor
FQB13N06LTM
ON Semiconductor
FQB13N06TM
ON Semiconductor
FQB13N10LTM
ON Semiconductor
FQB13N10TM
ON Semiconductor
FQB13N50CTM
ON Semiconductor
FQB14N15TM
ON Semiconductor
FQB14N30TM
ON Semiconductor
FQB15P12TM
ON Semiconductor
LFXP6E-4T144I
Lattice Semiconductor Corporation
XC6SLX16-N3FTG256C
Xilinx Inc.
AGLE3000V5-FG484
Microsemi Corporation
M1A3P250-1PQG208I
Microsemi Corporation
EP3C80F484C7N
Intel
10M50SCE144C8G
Intel
LCMXO2-7000HC-4BG256I
Lattice Semiconductor Corporation
EP1S80F1508C6
Intel
EPF8282ALC84-4
Intel
EPF10K130EQC240-3N
Intel