Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQB9N50CFTM_WS
Herstellerteilenummer | FQB9N50CFTM_WS |
---|---|
Zukünftige Teilenummer | FT-FQB9N50CFTM_WS |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | FRFET® |
FQB9N50CFTM_WS Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 35nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1030pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 173W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB9N50CFTM_WS Gewicht | kontaktiere uns |
Ersatzteilnummer | FQB9N50CFTM_WS-FT |
FQB12N60TM_AM002
ON Semiconductor
FQB12P10TM
ON Semiconductor
FQB13N06LTM
ON Semiconductor
FQB13N06TM
ON Semiconductor
FQB13N10LTM
ON Semiconductor
FQB13N10TM
ON Semiconductor
FQB13N50CTM
ON Semiconductor
FQB14N15TM
ON Semiconductor
FQB14N30TM
ON Semiconductor
FQB15P12TM
ON Semiconductor
XC6SLX100T-N3FG900C
Xilinx Inc.
M2GL050TS-1FGG484I
Microsemi Corporation
EP2A40F672C7
Intel
EP3SL200F1517C4
Intel
XC7A200T-2FB484I
Xilinx Inc.
XC6VCX195T-1FFG1156I
Xilinx Inc.
LFEC33E-3FN484C
Lattice Semiconductor Corporation
EPF10K10LC84-4
Intel
EPF81188ARC240-2
Intel
EP1C12Q240C7
Intel