Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQD2N80TM_WS
Herstellerteilenummer | FQD2N80TM_WS |
---|---|
Zukünftige Teilenummer | FT-FQD2N80TM_WS |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQD2N80TM_WS Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 800V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.8A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.3 Ohm @ 900mA, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 550pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 2.5W (Ta), 50W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D-Pak |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQD2N80TM_WS Gewicht | kontaktiere uns |
Ersatzteilnummer | FQD2N80TM_WS-FT |
FDD4243-F085P
ON Semiconductor
FDD45AN06LA0
ON Semiconductor
FDD45AN06LA0_F085
ON Semiconductor
FDD4685-F085P
ON Semiconductor
FDD4685TF_SB82135
ON Semiconductor
FDD5810
ON Semiconductor
FDD5N50FTF_WS
ON Semiconductor
FDD5N50TF_WS
ON Semiconductor
FDD5N50UTF_WS
ON Semiconductor
FDD5N53TM_WS
ON Semiconductor
XC3S50-4TQG144I
Xilinx Inc.
XC3S5000-4FGG676I
Xilinx Inc.
XC6SLX25-L1FG484I
Xilinx Inc.
A54SX16A-1FG256
Microsemi Corporation
MPF300T-1FCG1152E
Microsemi Corporation
AT6005LV-4AC
Microchip Technology
EP3SL200H780I4L
Intel
LFEC6E-3Q208I
Lattice Semiconductor Corporation
LFXP2-17E-6F484C
Lattice Semiconductor Corporation
10AX066K2F40E2LG
Intel