Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQD3N50CTM
Herstellerteilenummer | FQD3N50CTM |
---|---|
Zukünftige Teilenummer | FT-FQD3N50CTM |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQD3N50CTM Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.25A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 13nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 365pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 35W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D-Pak |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQD3N50CTM Gewicht | kontaktiere uns |
Ersatzteilnummer | FQD3N50CTM-FT |
FDD6637-F085
ON Semiconductor
FDD6670AL
ON Semiconductor
FDD6670AS
ON Semiconductor
FDD6672A
ON Semiconductor
FDD6676AS
ON Semiconductor
FDD6680
ON Semiconductor
FDD6680A
ON Semiconductor
FDD6682
ON Semiconductor
FDD6688S
ON Semiconductor
FDD6696
ON Semiconductor
A3P060-1TQ144I
Microsemi Corporation
M2GL025T-1FCSG325I
Microsemi Corporation
M1A3P400-FG484
Microsemi Corporation
LFE5UM-45F-8BG381C
Lattice Semiconductor Corporation
EPF10K130EFI484-2
Intel
5SGXEA4K1F35C2N
Intel
ICE40UL1K-CM36AI
Lattice Semiconductor Corporation
LFXP6C-5Q208C
Lattice Semiconductor Corporation
5AGXFB3H4F35C5N
Intel
10AX016E3F27I1HG
Intel