Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQD3N60TM
Herstellerteilenummer | FQD3N60TM |
---|---|
Zukünftige Teilenummer | FT-FQD3N60TM |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQD3N60TM Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.4A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.2A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 13nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 450pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 2.5W (Ta), 50W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D-Pak |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQD3N60TM Gewicht | kontaktiere uns |
Ersatzteilnummer | FQD3N60TM-FT |
FDD6670AS
ON Semiconductor
FDD6672A
ON Semiconductor
FDD6676AS
ON Semiconductor
FDD6680
ON Semiconductor
FDD6680A
ON Semiconductor
FDD6682
ON Semiconductor
FDD6688S
ON Semiconductor
FDD6696
ON Semiconductor
FDD6760A
ON Semiconductor
FDD6770A
ON Semiconductor
XC2S200-5FGG456I
Xilinx Inc.
AX1000-2FGG484
Microsemi Corporation
LCMXO640E-5FTN256C
Lattice Semiconductor Corporation
EP1S20F672I7
Intel
XC7VX980T-1FFG1930C
Xilinx Inc.
A42MX16-PQG160I
Microsemi Corporation
LFE2-50E-6F484I
Lattice Semiconductor Corporation
LCMXO3L-2100C-5BG256I
Lattice Semiconductor Corporation
LFE3-35EA-7FN672I
Lattice Semiconductor Corporation
10AX057K4F40I3SG
Intel