Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQD9N08TM
Herstellerteilenummer | FQD9N08TM |
---|---|
Zukünftige Teilenummer | FT-FQD9N08TM |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQD9N08TM Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 80V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 7.4A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 3.7A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 7.7nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 250pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 2.5W (Ta), 25W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D-Pak |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQD9N08TM Gewicht | kontaktiere uns |
Ersatzteilnummer | FQD9N08TM-FT |
FQD1N80TF
ON Semiconductor
FQD1P50TF
ON Semiconductor
FQD1P50TM
ON Semiconductor
FQD20N06LETM
ON Semiconductor
FQD20N06LTF
ON Semiconductor
FQD20N06LTM
ON Semiconductor
FQD20N06TF
ON Semiconductor
FQD24N08TF
ON Semiconductor
FQD24N08TM
ON Semiconductor
FQD2N100TF
ON Semiconductor
XC6SLX150T-2CSG484I
Xilinx Inc.
M2GL010-FGG484I
Microsemi Corporation
A54SX32A-CQ256M
Microsemi Corporation
A3PN250-2VQ100
Microsemi Corporation
5SGXEA5K2F40I3L
Intel
5SGXMA9N2F45C2LN
Intel
XC7VX690T-1FF1157I
Xilinx Inc.
XC4VLX160-10FF1148C
Xilinx Inc.
XC2V8000-4FFG1152I
Xilinx Inc.
XC2V1500-5FF896I
Xilinx Inc.