Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQH44N10-F133
Herstellerteilenummer | FQH44N10-F133 |
---|---|
Zukünftige Teilenummer | FT-FQH44N10-F133 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQH44N10-F133 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 48A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 24A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 62nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 1800pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 180W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-247 |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQH44N10-F133 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQH44N10-F133-FT |
GP1M016A025FG
Global Power Technologies Group
GP1M016A060F
Global Power Technologies Group
GP1M016A060FH
Global Power Technologies Group
GP1M018A020FG
Global Power Technologies Group
GP2M002A060FG
Global Power Technologies Group
GP2M002A065FG
Global Power Technologies Group
GP2M004A060FG
Global Power Technologies Group
GP2M004A065FG
Global Power Technologies Group
GP2M005A050FG
Global Power Technologies Group
GP2M005A060FG
Global Power Technologies Group
EX64-TQ100I
Microsemi Corporation
M2GL090T-FCSG325I
Microsemi Corporation
M1AFS600-2FG256I
Microsemi Corporation
5SGXMA7N2F40I3N
Intel
XCS05-3PC84C
Xilinx Inc.
XC2V4000-5FFG1152I
Xilinx Inc.
AGL600V5-FGG144
Microsemi Corporation
EP3SL150F780C4LN
Intel
EPF10K30RC240-4N
Intel
EP1S60F1020C5N
Intel