Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQN1N50CTA
Herstellerteilenummer | FQN1N50CTA |
---|---|
Zukünftige Teilenummer | FT-FQN1N50CTA |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQN1N50CTA Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 380mA (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 190mA, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 6.4nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 195pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 890mW (Ta), 2.08W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-92-3 |
Paket / fall | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQN1N50CTA Gewicht | kontaktiere uns |
Ersatzteilnummer | FQN1N50CTA-FT |
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