Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQN1N60CTA
Herstellerteilenummer | FQN1N60CTA |
---|---|
Zukünftige Teilenummer | FT-FQN1N60CTA |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQN1N60CTA Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 300mA (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 150mA, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 6.2nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 170pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Ta), 3W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-92-3 |
Paket / fall | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQN1N60CTA Gewicht | kontaktiere uns |
Ersatzteilnummer | FQN1N60CTA-FT |
MPF960
ON Semiconductor
MPF990
ON Semiconductor
NDF0610
ON Semiconductor
PN3685
ON Semiconductor
SSN1N45BBU
ON Semiconductor
TP0610KL-TR1-E3
Vishay Siliconix
VN10LPSTOA
Diodes Incorporated
VN10LPSTOB
Diodes Incorporated
VN2410LG
ON Semiconductor
ZVN0124ASTOA
Diodes Incorporated
A3PE600-1PQG208I
Microsemi Corporation
AT6002-4AC
Microchip Technology
5SGSED8K3F40I4N
Intel
5SGXEB5R1F40I2N
Intel
5SGXMA3K3F40C2N
Intel
EP3SE260F1517C2N
Intel
LFE2-20SE-5FN484C
Lattice Semiconductor Corporation
LFE3-70EA-8LFN672I
Lattice Semiconductor Corporation
10AX115U2F45I2SGE2
Intel
5CGXFC9E7F35C8N
Intel