Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQP13N10
Herstellerteilenummer | FQP13N10 |
---|---|
Zukünftige Teilenummer | FT-FQP13N10 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP13N10 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12.8A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 6.4A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 16nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 450pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 65W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP13N10 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP13N10-FT |
FQPF8N90C
ON Semiconductor
FQPF8P10
ON Semiconductor
FQPF90N10V2
ON Semiconductor
FQPF9N08
ON Semiconductor
FQPF9N08L
ON Semiconductor
FQPF9N15
ON Semiconductor
FQPF9N25
ON Semiconductor
FQPF9N25CT
ON Semiconductor
FQPF9N30
ON Semiconductor
FQPF9N50
ON Semiconductor
EP1C6T144C6
Intel
LCMXO2-1200ZE-3TG144IR1
Lattice Semiconductor Corporation
A42MX09-FVQ100
Microsemi Corporation
EP4CE10E22C7N
Intel
XC5VLX30-1FF676I
Xilinx Inc.
AGL600V2-FG144
Microsemi Corporation
LCMXO2-7000HC-6BG256C
Lattice Semiconductor Corporation
LFXP2-8E-5MN132C
Lattice Semiconductor Corporation
5AGXMA1D4F31I3N
Intel
EP4CE55F29C6
Intel