Herstellerteilenummer | FQP4N80 |
---|---|
Zukünftige Teilenummer | FT-FQP4N80 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP4N80 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 800V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.95A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 880pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 130W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220AB |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP4N80 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP4N80-FT |
FQPF5N50CFTU
ON Semiconductor
FQPF5N50CT
ON Semiconductor
FQPF5N50CTTU
ON Semiconductor
FQPF5N60
ON Semiconductor
FQPF5N60C_F105
ON Semiconductor
FQPF5N80
ON Semiconductor
FQPF5P10
ON Semiconductor
FQPF5P20
ON Semiconductor
FQPF6N15
ON Semiconductor
FQPF6N25
ON Semiconductor
A3P030-2QNG68I
Microsemi Corporation
A1425A-1PQ100I
Microsemi Corporation
XC4052XL-09HQ304C
Xilinx Inc.
A3P125-2PQ208I
Microsemi Corporation
A3P250L-VQG100I
Microsemi Corporation
EP3CLS100F484C7
Intel
EP2AGX125DF25C4N
Intel
EP2AGX65DF25C5
Intel
5CEBA5U19C8N
Intel
EP1C20F324I7N
Intel