Herstellerteilenummer | FQP6N15 |
---|---|
Zukünftige Teilenummer | FT-FQP6N15 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | QFET® |
FQP6N15 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 150V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 6.4A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 3.2A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 8.5nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 270pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 63W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQP6N15 Gewicht | kontaktiere uns |
Ersatzteilnummer | FQP6N15-FT |
FDP150N10A
ON Semiconductor
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ICE40UL640-SWG16ITR50
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A54SX16P-VQ100M
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LCMXO256E-3M100I
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LCMXO1200E-3MN132I
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EP3SL110F780C3N
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EP3SL110F780I4
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