Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQPF11N50CF
Herstellerteilenummer | FQPF11N50CF |
---|---|
Zukünftige Teilenummer | FT-FQPF11N50CF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | FRFET® |
FQPF11N50CF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 5.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 55nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 2055pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 48W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220F |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQPF11N50CF Gewicht | kontaktiere uns |
Ersatzteilnummer | FQPF11N50CF-FT |
GP1M018A020HG
Global Power Technologies Group
GP2M002A060HG
Global Power Technologies Group
GP2M002A065HG
Global Power Technologies Group
GP2M004A060HG
Global Power Technologies Group
GP2M004A065HG
Global Power Technologies Group
GP2M005A050HG
Global Power Technologies Group
GP2M005A060HG
Global Power Technologies Group
GP2M007A065HG
Global Power Technologies Group
GP2M008A060HG
Global Power Technologies Group
GP2M010A060H
Global Power Technologies Group
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