Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQPF11N50CF
Herstellerteilenummer | FQPF11N50CF |
---|---|
Zukünftige Teilenummer | FT-FQPF11N50CF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | FRFET® |
FQPF11N50CF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 5.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 55nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 2055pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 48W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220F |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQPF11N50CF Gewicht | kontaktiere uns |
Ersatzteilnummer | FQPF11N50CF-FT |
GP1M018A020HG
Global Power Technologies Group
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Global Power Technologies Group
GP2M007A065HG
Global Power Technologies Group
GP2M008A060HG
Global Power Technologies Group
GP2M010A060H
Global Power Technologies Group
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