Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / FQT4N20TF
Herstellerteilenummer | FQT4N20TF |
---|---|
Zukünftige Teilenummer | FT-FQT4N20TF |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
FQT4N20TF Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 850mA (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 425mA, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 6.5nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 220pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 2.2W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-223-4 |
Paket / fall | TO-261-4, TO-261AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQT4N20TF Gewicht | kontaktiere uns |
Ersatzteilnummer | FQT4N20TF-FT |
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